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Vacancy-impurity pairs in n-type Si1-xGex studied by positron spectroscopy
- Source :
-
Physica B . Apr2006, Vol. 376-377, p208-211. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: Positron annihilation spectroscopy was applied to study relaxed P-doped n-type layers with Ge concentrations up to 30%. As-grown SiGe layers were defect-free and annihilations are superpositions from bulk Si and Ge. Proton irradiation at 2MeV energy with a fluence was used to produce saturated positron trapping in monovacancy related defects. The defects were identified as V–P pairs, the E-center. The distribution of Si and Ge atoms surrounding the E-center is the same as in the host lattice. The vacancy migration process leading to the formation of V–P pairs therefore does not seem to have a preference for either Si or Ge atoms. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 09214526
- Volume :
- 376-377
- Database :
- Academic Search Index
- Journal :
- Physica B
- Publication Type :
- Academic Journal
- Accession number :
- 20269327
- Full Text :
- https://doi.org/10.1016/j.physb.2005.12.055