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Determination of domain wall resistance in a cobalt thin film by thickness modulation.
- Source :
-
Applied Physics Letters . 3/20/2006, Vol. 88 Issue 12, p122503. 3p. 1 Color Photograph, 2 Graphs. - Publication Year :
- 2006
-
Abstract
- Inspired by a well-known fact that the magnetic coercivity of a thin film has a strong dependence on its thickness, we have fabricated a 5×60 μm and 30 nm thick cobalt (Co) strip with thickness modulation along its long axis. The modulation period of 700 nm with a depth of 8 nm was prepared by a focused ion beam. From magnetic force microscope images, we observed an induced magnetic anisotropy along the short axis of the strip. By comparing out-of-plane magnetoresistance measurements in two magnetic remnant states, we extracted a positive domain wall resistance of 0.03 Ω, corresponding to 0.14% magnetoresistance (MR) in a Co thin film. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*COBALT
*ION bombardment
*MAGNETIC force microscopy
*MAGNETORESISTANCE
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 88
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 20361740
- Full Text :
- https://doi.org/10.1063/1.2186978