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MOS Capacitance Measurements for High-Leakage Thin Dielectrics.
- Source :
-
IEEE Transactions on Electron Devices . Jul99, Vol. 46 Issue 7, p1500. 2p. 1 Diagram, 2 Graphs. - Publication Year :
- 1999
-
Abstract
- Focuses on a study which demonstrated a method to measure a metal oxide semiconductor (MOS) capacitor with thin gate oxide and large tunneling current. Theoretical framework of the study; Conclusion.
- Subjects :
- *METAL oxide semiconductors
*CAPACITORS
*QUANTUM tunneling
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 46
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 2045345
- Full Text :
- https://doi.org/10.1109/16.772500