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Study of electrical transport and magnetic properties in CaMn1−x Cu x O3

Authors :
Kar, Manoranjan
Borah, S.M.
Ravi, S.
Source :
Materials Science & Engineering: B. Apr2006, Vol. 129 Issue 1-3, p54-58. 5p.
Publication Year :
2006

Abstract

Abstract: Copper doped, CaMn1−x Cu x O3 compounds have been prepared in single phase form for x =0–0.20. XRD patterns could be analyzed using Pbnm space group with typical lattice parameters a =5.276Å, b =5.259Å and c =7.459Å. All samples exhibit antiferromagnetic transitions with Neel temperatures around 124K. The temperature variations of electrical resistivity follow the semi-conducting behaviour and they could be analyzed using variable range hopping with Coulomb interaction (ES-VRH) model. The Cu doping is found to enhance the antiferromagnetic interactions. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
09215107
Volume :
129
Issue :
1-3
Database :
Academic Search Index
Journal :
Materials Science & Engineering: B
Publication Type :
Academic Journal
Accession number :
20525966
Full Text :
https://doi.org/10.1016/j.mseb.2005.12.034