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Formation of microcrystalline silicon and SiN x films by electron-beam-induced-chemical vapor deposition at ultra low temperature
- Source :
-
Thin Solid Films . Jun2006, Vol. 508 Issue 1/2, p61-64. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: We synthesized silicon films (hydrogenated microcrystalline silicon in hydrogenated amorphous silicon) and silicon nitride films by electron-beam-induced-chemical vapor deposition combined with low-temperature H tunneling reactions on cooled substrates, which adsorb source gases (SiH4 or Si2H6). The photoconductivity of the silicon film was 0.7×10−5 Ω−1 cm−1 and the dark conductivity was 3.3×10−5 Ω−1 cm−1. The dielectric constant of the silicon nitride film was estimated to be 6.5–7.0. [Copyright &y& Elsevier]
- Subjects :
- *SILICON
*THIN films
*ELECTRON beams
*CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 508
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 20551267
- Full Text :
- https://doi.org/10.1016/j.tsf.2005.07.333