Cite
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process
MLA
Tezuka, Tsutomu, et al. “Lattice Relaxation and Dislocation Generation/Annihilation in SiGe-on-Insulator Layers during Ge Condensation Process.” Thin Solid Films, vol. 508, no. 1/2, June 2006, pp. 251–55. EBSCOhost, https://doi.org/10.1016/j.tsf.2005.07.319.
APA
Tezuka, T., Moriyama, Y., Nakaharai, S., Sugiyama, N., Hirashita, N., Toyoda, E., Miyamura, Y., & Takagi, S. (2006). Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process. Thin Solid Films, 508(1/2), 251–255. https://doi.org/10.1016/j.tsf.2005.07.319
Chicago
Tezuka, Tsutomu, Yoshihiko Moriyama, Shu Nakaharai, Naoharu Sugiyama, Norio Hirashita, Eiji Toyoda, Yoshiji Miyamura, and Shin-ichi Takagi. 2006. “Lattice Relaxation and Dislocation Generation/Annihilation in SiGe-on-Insulator Layers during Ge Condensation Process.” Thin Solid Films 508 (1/2): 251–55. doi:10.1016/j.tsf.2005.07.319.