Cite
Physics-based modeling and characterization for silicon carbide power diodes
MLA
McNutt, Ty R., et al. “Physics-Based Modeling and Characterization for Silicon Carbide Power Diodes.” Solid-State Electronics, vol. 50, no. 3, Mar. 2006, pp. 388–98. EBSCOhost, https://doi.org/10.1016/j.sse.2006.01.013.
APA
McNutt, T. R., Hefner, A. R., Mantooth, H. A., Duliere, J. L., Berning, D. W., & Singh, R. (2006). Physics-based modeling and characterization for silicon carbide power diodes. Solid-State Electronics, 50(3), 388–398. https://doi.org/10.1016/j.sse.2006.01.013
Chicago
McNutt, Ty R., Allen R. Hefner, H. Alan Mantooth, Jeff L. Duliere, David W. Berning, and Ranbir Singh. 2006. “Physics-Based Modeling and Characterization for Silicon Carbide Power Diodes.” Solid-State Electronics 50 (3): 388–98. doi:10.1016/j.sse.2006.01.013.