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Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L
- Source :
-
Applied Surface Science . Apr2006, Vol. 252 Issue 12, p4209-4217. 9p. - Publication Year :
- 2006
-
Abstract
- Abstract: The oxide films formed on AISI 304L stainless steel at 300°C in the oxidation time range between 2 and 4h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (E g2 =2.16–2.3eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (E g1 ≈1.9eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time. [Copyright &y& Elsevier]
- Subjects :
- *ALLOYS
*CORROSION resistant materials
*STEEL alloys
*STAINLESS steel
*OXIDATION
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 252
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 20726302
- Full Text :
- https://doi.org/10.1016/j.apsusc.2005.06.036