Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

MLA

Hakkarainen, T., et al. “Photoluminescence and Structural Properties of GaInNAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy under Different Arsenic Pressures.” Physica E, vol. 32, no. 1/2, May 2006, pp. 266–69. EBSCOhost, https://doi.org/10.1016/j.physe.2005.12.050.

APA

Hakkarainen, T., Pavelescu, E.-M., & Likonen, J. (2006). Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures. Physica E, 32(1/2), 266–269. https://doi.org/10.1016/j.physe.2005.12.050

Chicago

Hakkarainen, T., E.-M. Pavelescu, and J. Likonen. 2006. “Photoluminescence and Structural Properties of GaInNAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy under Different Arsenic Pressures.” Physica E 32 (1/2): 266–69. doi:10.1016/j.physe.2005.12.050.