Organic thin-film transistors with high mobilities and low operating voltages based on 5,5′-bis-biphenyl-dithieno[3,2-b:2′,3′-d]thiophene semiconductor and polymer gate dielectric.

Employing 5,5′-bis-biphenyl-dithieno[3,2-b:2′,3′-d]thiophene (BPDTT) as semiconducting layer and poly(vinyl alcohol) (PVA) as gate dielectric layer, we have fabricated organic thin-film transistors. These devices exhibit excellent field-effect performances with a high mobility of up to 0.6 cm2/V s and a very low operating voltage (<1 V) at room temperature. The single crystal of BPDTT was grown and analyzed. The high performances are mainly attributed to the close herringbone packing of BPDTT molecules and the high homogeneity between PVA and BPDTT molecules. [ABSTRACT FROM AUTHOR]