Cite
Electrical Characteristics of 8-Å EOT Hf02/TaN Low Thermal-Budget n-Channel FETs With Solid-Phase Epitaxially Regrown Junctions.
MLA
Ragnarsson, Lars-Åke, et al. “Electrical Characteristics of 8-Å EOT Hf02/TaN Low Thermal-Budget n-Channel FETs With Solid-Phase Epitaxially Regrown Junctions.” IEEE Transactions on Electron Devices, vol. 53, no. 7, July 2006, pp. 1657–68. EBSCOhost, https://doi.org/10.1109/TED.2006.876274.
APA
Ragnarsson, L.-Å., Severi, S., Trojman, L., Johnson, K. D., Brunco, D. P., Aoulaiche, M., Houssa, M., Kauerauf, T., Degraeve, R., Delabie, A., Kaushik, V. S., De Gendt, S., Tsai, W., Groeseneken, G., De Meyer, K., & Heyns, M. (2006). Electrical Characteristics of 8-Å EOT Hf02/TaN Low Thermal-Budget n-Channel FETs With Solid-Phase Epitaxially Regrown Junctions. IEEE Transactions on Electron Devices, 53(7), 1657–1668. https://doi.org/10.1109/TED.2006.876274
Chicago
Ragnarsson, Lars-Åke, Simone Severi, Lionel Trojman, Kevin D. Johnson, David P. Brunco, Marc Aoulaiche, Michel Houssa, et al. 2006. “Electrical Characteristics of 8-Å EOT Hf02/TaN Low Thermal-Budget n-Channel FETs With Solid-Phase Epitaxially Regrown Junctions.” IEEE Transactions on Electron Devices 53 (7): 1657–68. doi:10.1109/TED.2006.876274.