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Local silicon-gate carbon nanotube field effect transistors using silicon-on-insulator technology.
- Source :
-
Applied Physics Letters . 7/10/2006, Vol. 89 Issue 2, p023116. 3p. 1 Diagram, 1 Chart, 2 Graphs. - Publication Year :
- 2006
-
Abstract
- A local silicon-gate carbon nanotube field effect transistor (CNFET) configuration has been proposed and implemented for integration purpose. By combining the advantages of in situ carbon nanotube growth technology and the silicon-on-insulator technology, we have realized the CNFETs with individual device operation, low parasitic capacitance, high yield fabrication, and better compatibility to the complementary-metal-oxide-semiconductor (CMOS) process. The CNFETs show up-to-date electrical performance. The scaling effect of gate oxide is also explored. This configuration makes CNFET a step closer to the CMOS integrated circuit application. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 21695343
- Full Text :
- https://doi.org/10.1063/1.2221515