Vertical GaP nanowires arranged at atomic steps on Si(111) substrates.

Authors :: Tateno, K.
Hibino, H.
Gotoh, H.
Nakano, H.
Source :: Applied Physics Letters. 7/17/2006, Vol. 89 Issue 3, p033114. 3p. 1 Color Photograph, 1 Black and White Photograph, 1 Diagram, 1 Graph.
Publication Year :: 2006
Abstract: We report vertical GaP nanowires self-arranged in lines formed from Au islands that were initially arranged at single-layer steps on Si(111) substrates. These Au islands are spontaneously arranged by controlling the deposition. There are three aspects to the growth of vertical GaP wires: the cosupply of TMGa and PH3, two growths at different temperatures, and a low PH3 flow rate. The grown wires are quite ordered in lines of several micrometers. Electrical measurement confirmed selective current flow at the wires and we confirmed photoluminescence from the wires. This bottom-up technique is promising for nano-hetero-device integration on Si circuits. [ABSTRACT FROM AUTHOR]