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Microstructure, ferromagnetism, and magnetic transport of Ti1-xCoxO2 amorphous magnetic semiconductor.
- Source :
-
Journal of Applied Physics . 6/15/2006, Vol. 99 Issue 12, p123903. 5p. 1 Black and White Photograph, 4 Graphs. - Publication Year :
- 2006
-
Abstract
- TiO2-based magnetic semiconductors with high Co doping concentrations (Ti1-xCoxO2) were synthesized under thermal nonequilibrium condition by sputtering machine. Microstructure and composition analysis by transmission electron microscopy, x-ray photoelectron spectroscopy, and electron energy-loss spectroscopy indicated that Co element was incorporated into TiO2 to form Ti1-xCoxO2 compound. The direct evidence for the compositional inhomogeneity of the Ti1-xCoxO2 compound was given. Room temperature ferromagnetism with high magnetization was obtained, which could be attributed to the intrinsic properties of the amorphous magnetic semiconductor. The electrical transport in a low temperature range was explained by spin-dependent Efros’s variable range hopping, and correspondingly an exponential function of the magnetoresistance versus T-1/2 was found. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 99
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 21845521
- Full Text :
- https://doi.org/10.1063/1.2204758