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Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon.
- Source :
-
Applied Physics Letters . 8/14/2006, Vol. 89 Issue 7, p073106. 3p. 2 Graphs. - Publication Year :
- 2006
-
Abstract
- The authors demonstrate a silicon-based single-electron transistor (SET) in the few-electron regime. Our structure is similar to a metal-oxide-semiconductor field-effect transistor. The substrate, however, is undoped and could be isotope enriched so that any nonuniformity and spin decoherence due to impurity and nuclear spins can be minimized. A bilayer-gated configuration provides flexibility in manipulating single electrons. The stability chart measured at 4.2 K shows diamondlike domains with a charging energy of 18 meV, indicating a quantum dot of 20 nm in diameter. The benefits of using this enhancement-mode SET in silicon and its potential application for scalable quantum computing are discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 22205311
- Full Text :
- https://doi.org/10.1063/1.2337273