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Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates.
- Source :
-
Applied Physics Letters . 8/21/2006, Vol. 89 Issue 8, p081905. 3p. 2 Color Photographs, 1 Black and White Photograph, 1 Graph. - Publication Year :
- 2006
-
Abstract
- The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150 °C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4–10 μm. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 22256998
- Full Text :
- https://doi.org/10.1063/1.2245436