Structural characterization of metal organic vapor phase epitaxy grown GaInNAs quantum well with InGaAs and GaNAs barriers.

The effects of InGaAs/GaNAs barrier combinations were investigated in the metal organic vapor phase epitaxy grown GaInNAs quantum wells (QWs). Significant improvement was made in the optical performance of the 1.3 μm range with the proposed structures. Structural investigation linked with the optical properties reveals that a thin InGaAs layer, placed between GaInNAs QWs and GaNAs layers, plays a role in redistributing the nitrogen within the QWs while maintaining a sharp interface. The amount of diffused nitrogen is proportional to the strain residing in the InGaAs layer, which explains the tendency of blueshift with the increase in GaNAs thickness. [ABSTRACT FROM AUTHOR]