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SPICE Modelling of a Discrete COTS SiGe HBT for Digital Applications up to MGy Dose Levels.

Authors :
Van Uffelen, M.
Geboers, S.
Leroux, P.
Berghmans, F.
Source :
IEEE Transactions on Nuclear Science. Aug2006 Part 1 Of 2, Vol. 53 Issue 4, p1945-1949. 6p. 1 Diagram, 1 Chart, 5 Graphs.
Publication Year :
2006

Abstract

Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (β) presents a limited loss of about 30% for a base current of 100 μA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189499
Volume :
53
Issue :
4
Database :
Academic Search Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
22324669
Full Text :
https://doi.org/10.1109/TNS.2006.880949