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Formation and investigation of p–n diode structures based on lanthanum manganites and Nb-doped SrTiO3
- Source :
-
Thin Solid Films . Oct2006, Vol. 515 Issue 2, p599-602. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: High quality La2/3Ba1/3MnO3 (LBMO), La2/3Ca1/3MnO3 (LCaMO) and La2/3Ce1/3MnO3 (LCeMO) thin films were grown on Nb 0.1 wt.% doped conducting SrTiO3(100) (STON) substrates. Asymmetric current–voltage relations measured for the LBMO/STON, LCaMO/STON and LCeMO/STON heterostructures at T =78/300 K certified hole-doping of the manganite films. The diffusion voltage, corresponding to a steep current increase at forward bias has been estimated. The LCaMO/STON heterojunction showed possible impact of interfacial strain on the rectifying behavior, meanwhile, the LaCeMO/STON heterostructures demonstrated evidence of phase separation of the manganite film at the interface. [Copyright &y& Elsevier]
- Subjects :
- *LANTHANUM
*MANGANITE
*THIN films
*DOPED semiconductor superlattices
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 515
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 22606541
- Full Text :
- https://doi.org/10.1016/j.tsf.2005.12.253