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Control of Threshold Voltage of A1GaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode.
- Source :
-
IEEE Transactions on Electron Devices . Sep2006, Vol. 53 Issue 9, p2207-2215. 9p. 4 Black and White Photographs, 1 Diagram, 2 Charts, 9 Graphs. - Publication Year :
- 2006
-
Abstract
- This paper presents a method with an accurate control of threshold voltages (Vth) of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment. Using this method, the Vth of AlGaN/GaN HEMTs can be continuously shifted from 4 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 0.9 V in an enhancement-mode AlGaN/GaN HEMT. It was found that the plasma-induced damages result in a mobility degradation of two-dimensional electron gas. The damages can be repaired and the mobility can be recovered by a post-gate annealing step at 400 °C. At the same time, the shift in Vth shows a good thermal stability and is not affected by the post-gate annealing. The enhancement-mode HEMTs show a performance (transconductance, cutoff frequencies) comparable to the D-mode HEMTs. Experimental results confirm that the threshold-voltage shift originates from the incorporation of F ions in the AlGaN barrier. In addition, the fluoride-based plasma treatment was also found to be effective in lowering the gate-leakage current, in both forward and reverse bias regions. A physical model of the threshold voltage is proposed to explain the effects of the fluoride-based plasma treatment on AlGaN/GaN HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 22676609
- Full Text :
- https://doi.org/10.1109/TED.2006.881054