Cite
Monolithically Integrated Enhancement/Depletion-Mode A1GaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment.
MLA
Yong Cai, et al. “Monolithically Integrated Enhancement/Depletion-Mode A1GaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment.” IEEE Transactions on Electron Devices, vol. 53, no. 9, Sept. 2006, pp. 2223–30. EBSCOhost, https://doi.org/10.1109/TED.2005.881002.
APA
Yong Cai, Zhiqun Cheng, Wilson Chak Wah Tang, Kei May Lau, & Chen, K. J. (2006). Monolithically Integrated Enhancement/Depletion-Mode A1GaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment. IEEE Transactions on Electron Devices, 53(9), 2223–2230. https://doi.org/10.1109/TED.2005.881002
Chicago
Yong Cai, Zhiqun Cheng, Wilson Chak Wah Tang, Kei May Lau, and Kevin J. Chen. 2006. “Monolithically Integrated Enhancement/Depletion-Mode A1GaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment.” IEEE Transactions on Electron Devices 53 (9): 2223–30. doi:10.1109/TED.2005.881002.