Dynamic Thermomagnetic Writing in Tunnel Junction Cells Incorporating Two GeSbTe Thermal Barriers.

Magnetic tunnel junctions (MTJs) incorporating GeSbTe thermal barriers and weakly pinned free layers (Hex ∼ 60 Oe) have been produced with areas between 1 × 1 μm² and 3 × 8μm². Current pulses lasting from 100 μs down to 20 ns were used to heat the MTJs and reverse the free layer pinning field. It is demonstrated that pulses with 7 mW/μm² can be used to switch the free layer of MTJs incorporating GeSbTe (20 mW/μm² without GeSbTe). The dependence of the power required to switch the MTJs is studied with respect to sample area, pulse duration, and GeSbTe thickness. [ABSTRACT FROM AUTHOR]