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Dielectric constant enhancement due to Si incorporation into HfO2.
- Source :
-
Applied Physics Letters . 10/2/2006, Vol. 89 Issue 14, p142902. 3p. 4 Graphs. - Publication Year :
- 2006
-
Abstract
- The authors investigated the dielectric constant change of Hf(1-x)SixO2 film as functions of Si concentration and annealing temperature. As a result, the dielectric constant of Hf(1-x)SixO2 was increased when doped with a small amount of Si after 800 °C annealing. The authors revealed that the dielectric constant enhancement of Hf(1-x)SixO2 films is related to the phase transformation from the monoclinic to the tetragonal phase of HfO2. By using the Clausius-Mossotti relation, it is concluded that the dielectric constant enhancement through the structural phase transformation is derived from the molar volume shrinkage rather than the molar polarizability increase. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 22752241
- Full Text :
- https://doi.org/10.1063/1.2355471