Switching characteristics of an MOSFET-controlled high-power integrated thyristor.

The basic stages of switching a high-power integrated thyristor controlled by an external MOSFET are analyzed qualitatively and quantitatively. The stage of switching delay is analyzed in terms of an analytical model the adequacy of which is verified by numerically calculating the current decay transient upon switching off the n + pnn’p +-structure. The effect of hyperdelay is discovered, which arises as the turned-off anode current approaches a limiting value depending on the parameters of the thyristor structure and control circuit. The specific energy losses are calculated, and it is shown that most losses are due to the current slow decay stage. [ABSTRACT FROM AUTHOR]