Comment on “Low resistivity p-ZnO films fabricated by sol-gel spin coating” [Appl. Phys. Lett. 88, 251116 (2006)].

In a recent letter, Cao et al. [Appl. Phys. Lett. 88, 251116 (2006)] reported the growth of In+N codoped p-type ZnO films with a low resistivity of 1.58×10-1 Ω cm by a simple sol-gel spin coating method. Unfortunately, this low resistivity value is doubtful based on Hall effect measurement analysis. If the values of carrier concentration and Hall mobility are correct in their experiment, the resistivity value should be 10.62 Ω cm, but not 1.58×10-1 Ω cm. [ABSTRACT FROM AUTHOR]