Back to Search
Start Over
Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals.
- Source :
-
Applied Physics Letters . 10/23/2006, Vol. 89 Issue 17, p173107. 3p. 3 Graphs. - Publication Year :
- 2006
-
Abstract
- Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The SiO2 bottom- and Al2O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2/V s, respectively. The operating gate voltages for the top-gate transistor with an Al2O3 dielectric layer are actually lower, compared with the SiO2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 23022004
- Full Text :
- https://doi.org/10.1063/1.2364153