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High-power InGaAs VCSEL's single devices and 2-D arrays
- Source :
-
Journal of Luminescence . Jan2007, Vol. 122-123, p571-573. 3p. - Publication Year :
- 2007
-
Abstract
- Abstract: Single devices and 2-D arrays of bottom-emitting vertical-cavity surface-emitting lasers operating in the 980nm wavelength regime, have been fabricated for high continuous-wave optical output power. Single devices with active diameters of 500μm show high output powers of 1.95 W at room temperature. Its threshold current is 510mA, and the maximum spatially averaged optical power density is 0.93kW/cm2. Arrays consisting of 16 elements of 200μm active diameters arranged in a square structure achieve output powers of 1.21 W corresponding to a power density of 1kW/cm2 spatially averaged over the effective array chip size. The device threshold current is 1.1A. [Copyright &y& Elsevier]
- Subjects :
- *QUANTUM wells
*LASERS
*LIGHT amplifiers
*LUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00222313
- Volume :
- 122-123
- Database :
- Academic Search Index
- Journal :
- Journal of Luminescence
- Publication Type :
- Academic Journal
- Accession number :
- 23212817
- Full Text :
- https://doi.org/10.1016/j.jlumin.2006.01.227