High-power InGaAs VCSEL's single devices and 2-D arrays

Abstract: Single devices and 2-D arrays of bottom-emitting vertical-cavity surface-emitting lasers operating in the 980nm wavelength regime, have been fabricated for high continuous-wave optical output power. Single devices with active diameters of 500μm show high output powers of 1.95 W at room temperature. Its threshold current is 510mA, and the maximum spatially averaged optical power density is 0.93kW/cm2. Arrays consisting of 16 elements of 200μm active diameters arranged in a square structure achieve output powers of 1.21 W corresponding to a power density of 1kW/cm2 spatially averaged over the effective array chip size. The device threshold current is 1.1A. [Copyright &y& Elsevier]