Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes.

The authors present a detailed investigation of defects generated during catastrophic optical damage (COD) in high-power 650 nm AlGaInP lasers using microphotoluminescence (μ-PL) mapping, focused ion beam (FIB) microscopy, and deep-etching techniques. High-resolution μ-PL images demonstrated that during COD, nonradiative dark line defects (DLDs) originate from the front mirror of the laser and propagate in several branches into the laser perpendicular to the output facet. Furthermore, FIB microscopy identified the epitaxial layers affected by COD, revealing that DLDs are confined to the active region. In addition, deep etching confirmed that these defects have a noncrystalline nature. [ABSTRACT FROM AUTHOR]