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Positron annihilation spectroscopy of vacancy complexes in SiGe
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . Dec2006, Vol. 253 Issue 1/2, p130-135. 6p. - Publication Year :
- 2006
-
Abstract
- Abstract: The aim of this contribution is to present a review of the results related to vacancy complexes in SiGe obtained in the positron group at Helsinki University of Technology. We have studied proton irradiated undoped and P doped SiGe layers with Ge concentration from 4% to 30%. The dominating defect after irradiation in the n-type layers is found to be the E-center, i.e. the vacancy phosphorus complex, no preferred association with either Ge or Si is found for the vacancy after irradiation. The E-center is observed to be mobile in the temperature interval 150–200°C and to migrate until it encounters a Ge atom and forms the V–P–Ge complex. This complex anneals out in temperatures above 200°C. We estimate that the binding energy increases by approximately 0.1–0.2eV when a Ge atom neighbours an E-center. For the undoped irradiated samples, we find no indication of vacancies surrounded by one or several Ge atoms, i.e. the presence of Ge around a vacancy is not enough to make the defect stable at room temperature. The dominating defect in undoped irradiated samples is most likely the divacancy. [Copyright &y& Elsevier]
- Subjects :
- *POSITRON annihilation
*SPECTRUM analysis
*NUCLEAR physics
*NUCLEAR energy
Subjects
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 253
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 23279145
- Full Text :
- https://doi.org/10.1016/j.nimb.2006.10.018