Cite
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs.
MLA
Meneghesso, Gaudenzio, et al. “Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices, vol. 53, no. 12, Dec. 2006, pp. 2932–41. EBSCOhost, https://doi.org/10.1109/TED.2006.885681.
APA
Meneghesso, G., Rampazzo, F., Kordoš, P., Verzellesi, G., & Zanoni, E. (2006). Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 53(12), 2932–2941. https://doi.org/10.1109/TED.2006.885681
Chicago
Meneghesso, Gaudenzio, Fabiana Rampazzo, Peter Kordoš, Giovanni Verzellesi, and Enrico Zanoni. 2006. “Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices 53 (12): 2932–41. doi:10.1109/TED.2006.885681.