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Magnetoresistance effect in a hybrid ferromagnetic/semiconductor nanostructure
- Source :
-
Solid State Communications . Feb2007, Vol. 141 Issue 5, p248-251. 4p. - Publication Year :
- 2007
-
Abstract
- Abstract: We propose a Magnetoresistance device in a magnetically modulated two-dimensional electron gas, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on the top and bottom of a semiconductor heterostructure. It is shown that there exists a significant transmission difference for electrons through the parallel and antiparallel magnetization configurations of such a device, which leads to a considerable magnetoresistance effect. It is also shown that the magnetoresistance ratio of the device depends greatly on the magnetic strength difference in the two delta barriers of the system. [Copyright &y& Elsevier]
- Subjects :
- *ELECTRIC resistance
*ELECTRIC impedance
*MAGNETORESISTANCE
*NANOSTRUCTURES
Subjects
Details
- Language :
- English
- ISSN :
- 00381098
- Volume :
- 141
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Solid State Communications
- Publication Type :
- Academic Journal
- Accession number :
- 23352201
- Full Text :
- https://doi.org/10.1016/j.ssc.2006.11.003