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Point and structural defects in Bi2Pb x Te3 single crystals
- Source :
-
Solid State Ionics . Jan2007, Vol. 177 Issue 39/40, p3513-3519. 7p. - Publication Year :
- 2007
-
Abstract
- Abstract: The study of the doping process of Bi2Te3 by Pb atoms in wide range of lead concentration ((1.0–80.0)×1018 cm−3) revealed two distinct areas of influence of the incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb (up to 20×1018 Pb atoms cm−3) the ratio of generated holes to one incorporated Pb atom — Δp/c Pb — falls from value of 1.06 down to 0.55, at higher concentration ((20–80)×1018 Pb atoms cm−3) the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01672738
- Volume :
- 177
- Issue :
- 39/40
- Database :
- Academic Search Index
- Journal :
- Solid State Ionics
- Publication Type :
- Academic Journal
- Accession number :
- 23513722
- Full Text :
- https://doi.org/10.1016/j.ssi.2006.10.002