Cite
DC and RF Characteristics of A1GaN/GaN/InGaN/GaN Double-Heterojunction HEMTs.
MLA
Jie Liu, et al. “DC and RF Characteristics of A1GaN/GaN/InGaN/GaN Double-Heterojunction HEMTs.” IEEE Transactions on Electron Devices, vol. 54, no. 1, Jan. 2007, pp. 2–10. EBSCOhost, https://doi.org/10.1109/TED.2006.887045.
APA
Jie Liu, Yugang Zhou, Jia Zhu, Yong Cai, Kei May Lau, & Chen, K. J. (2007). DC and RF Characteristics of A1GaN/GaN/InGaN/GaN Double-Heterojunction HEMTs. IEEE Transactions on Electron Devices, 54(1), 2–10. https://doi.org/10.1109/TED.2006.887045
Chicago
Jie Liu, Yugang Zhou, Jia Zhu, Yong Cai, Kei May Lau, and Kevin J. Chen. 2007. “DC and RF Characteristics of A1GaN/GaN/InGaN/GaN Double-Heterojunction HEMTs.” IEEE Transactions on Electron Devices 54 (1): 2–10. doi:10.1109/TED.2006.887045.