Back to Search
Start Over
Metal Acetylacetonate Domains Grown on H-Terminated Porous Silicon at Room Temperature and Their Specific I-VBehavior.
- Source :
-
Journal of Physical Chemistry B . Dec2006, Vol. 110 Issue 48, p24565-24570. 6p. - Publication Year :
- 2006
-
Abstract
- Porous silicon (PS) was incubated in an organic solution of metal acetylacetonates of Mn(acac)3, Fe(acac)3, Co(acac)3, and Ni(acac)2(acac MeCOCHCOMe) at room temperature. Crystal-like domains were found to be spontaneously self-assembled on PS surfaces by atomic force microscopy (AFM). Spectroscopic studies with attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectroscopy (XPS) revealed that the domains were grown from metal acetylacetonates. Current sensing atomic force microscopy (CSAFM) was used to measure the I-Vcurves of domains in nanoscale and specific step-jump currents on the manganese and cobalt acetylacetonate domains were surprisingly detected. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15206106
- Volume :
- 110
- Issue :
- 48
- Database :
- Academic Search Index
- Journal :
- Journal of Physical Chemistry B
- Publication Type :
- Academic Journal
- Accession number :
- 23618976
- Full Text :
- https://doi.org/10.1021/jp0628481