Back to Search Start Over

Metal Acetylacetonate Domains Grown on H-Terminated Porous Silicon at Room Temperature and Their Specific I-VBehavior.

Authors :
Jie Chao
Hai-Tao Wang
Bing Xia
Hong-Bo Liu
Zhong-Dang Xiao
Shou-Jun Xiao
Source :
Journal of Physical Chemistry B. Dec2006, Vol. 110 Issue 48, p24565-24570. 6p.
Publication Year :
2006

Abstract

Porous silicon (PS) was incubated in an organic solution of metal acetylacetonates of Mn(acac)3, Fe(acac)3, Co(acac)3, and Ni(acac)2(acac MeCOCHCOMe) at room temperature. Crystal-like domains were found to be spontaneously self-assembled on PS surfaces by atomic force microscopy (AFM). Spectroscopic studies with attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectroscopy (XPS) revealed that the domains were grown from metal acetylacetonates. Current sensing atomic force microscopy (CSAFM) was used to measure the I-Vcurves of domains in nanoscale and specific step-jump currents on the manganese and cobalt acetylacetonate domains were surprisingly detected. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15206106
Volume :
110
Issue :
48
Database :
Academic Search Index
Journal :
Journal of Physical Chemistry B
Publication Type :
Academic Journal
Accession number :
23618976
Full Text :
https://doi.org/10.1021/jp0628481