Cite
Electric switching and memory devices made from RbAg4I5 films.
MLA
Liang, X. F., et al. “Electric Switching and Memory Devices Made from RbAg4I5 Films.” Applied Physics Letters, vol. 90, no. 2, Jan. 2007, p. 022508–N.PAG. EBSCOhost, https://doi.org/10.1063/1.2431438.
APA
Liang, X. F., Chen, Y., Chen, L., Yin, J., & Liu, Z. G. (2007). Electric switching and memory devices made from RbAg4I5 films. Applied Physics Letters, 90(2), 022508–N.PAG. https://doi.org/10.1063/1.2431438
Chicago
Liang, X. F., Y. Chen, L. Chen, J. Yin, and Z. G. Liu. 2007. “Electric Switching and Memory Devices Made from RbAg4I5 Films.” Applied Physics Letters 90 (2): 022508–N.PAG. doi:10.1063/1.2431438.