Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

Abstract: We have studied the optical properties of a series of InGaN/AlInGaN 10-period multiple quantum wells (MQW) with differing well thickness grown by metal-organic vapor-phase epitaxy that emit at around 380nm. The aim of this investigation was to optimise the room temperature internal quantum efficiency, thus the quantum well (QW) thicknesses were accordingly chosen so that the overlap of the electron/hole wave function was maximised. At low temperature, we observed a reduction of the photoluminescence decay time with decreasing well width in line with the theoretical predictions. For a structure with well thicknesses of 1.5nm, we measured a photoluminescence internal quantum efficiency of 67% at room temperature with a peak emission wavelength of 382nm. [Copyright &y& Elsevier]