Magnetic and transport properties of homogeneous MnxGe1-x ferromagnetic semiconductor with high Mn concentration.

Homogeneous MnxGe1-x ferromagnetic semiconductor films with high Mn concentration were prepared, contrasting with dilute inhomogeneous MnxGe1-x magnetic semiconductors. The saturation magnetization of Mn0.57Ge0.43 films is high, up to 327 emu/cm3 (1.04μB/Mn) at 5 K, and the Curie temperature is about 213 K. The Mn0.57Ge0.43 films show semiconducting resistance, but the magnetoresistance is negligibly small. The anomalous Hall effect was observed below the Curie temperature, which is consistent with the magnetic measurements. The global ferromagnetism was discussed based on s,p-d exchange coupling between the weakly localized s,p hole carriers and the strongly localized d electrons of the Mn atoms. [ABSTRACT FROM AUTHOR]