Broadband SiGe/Si quantum dot infrared photodetectors.

Authors :: Lin, C.-H.
Yu, C.-Y.
Peng, C.-Y.
Ho, W. S.
Liu, C. W.
Source :: Journal of Applied Physics. 2/1/2007, Vol. 101 Issue 3, p033117-N.PAG. 4p. 4 Diagrams, 1 Chart, 5 Graphs.
Publication Year :: 2007
Abstract: The broadband absorption of metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors is demonstrated using boron δ doping in the Si spacer. The peak at 3.7–6 μm results from the intersubband transition in the SiGe quantum dot layers. The other peak at 6–16 μm mainly comes from the intraband transition in the boron δ-doping wells in the Si spacers. Since the atmospheric transmission windows are located at 3–5.3 and 7.5–14 μm, broadband detection is feasible using this device. The δ doping in SiGe quantum dots and Si0.9Ge0.1 quantum wells is also investigated to identify the origin of the absorption. [ABSTRACT FROM AUTHOR]