Cite
Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling.
MLA
Hazeghi, Arash, et al. “Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling.” IEEE Transactions on Electron Devices, vol. 54, no. 3, Mar. 2007, pp. 439–45. EBSCOhost, https://doi.org/10.1109/TED.2006.890384.
APA
Hazeghi, A., Krishnamohan, T., & Wong, H.-S. P. (2007). Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling. IEEE Transactions on Electron Devices, 54(3), 439–445. https://doi.org/10.1109/TED.2006.890384
Chicago
Hazeghi, Arash, Tejas Krishnamohan, and H.-S. Philip Wong. 2007. “Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling.” IEEE Transactions on Electron Devices 54 (3): 439–45. doi:10.1109/TED.2006.890384.