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Vertical Integration of a Spin Dependent Tunnel Junction with an Amorphous Si Diode for MRAM...

Authors :
Sousa, Ricardo C.
Freitas, Paulo P.
Source :
IEEE Transactions on Magnetics. Sep99 Part 1 of 3, Vol. 35 Issue 5, p2832. 3p. 1 Diagram, 3 Graphs.
Publication Year :
1999

Abstract

Presents information on a study which showed successful vertical integration of magnetic tunneling junctions with hydrogenated amorphous silicon diodes. Experimental methods; Results and discussion; Conclusions.

Subjects

Subjects :
*MAGNETICS
*SILICON diodes

Details

Language :
English
ISSN :
00189464
Volume :
35
Issue :
5
Database :
Academic Search Index
Journal :
IEEE Transactions on Magnetics
Publication Type :
Academic Journal
Accession number :
2422473
Full Text :
https://doi.org/10.1109/20.800995
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