Preparation of type-II MoS2 film by chemical bath deposition onto Si coated with electrolessly Ni

Abstract: MoS2 films were prepared by chemical bath deposition using Ni interlayer, which was deposited electrolessly on Si substrates. The combined techniques of X-ray diffraction, field emission scanning electron microscope (FESEM), Raman spectroscopy and optical reflective spectra were used for characterization of MoS2 films at different conditions. Results indicated that the type-II MoS2 films oriented with their c axis perpendicular to the plane of Si substrates were obtained at annealing temperature greater than 800°C. The effect of nickel on the orientation of 2H–MoS2 crystallites can be explained on the basis of binary Ni–S phase diagram. The thin films have a direct optical bandgap of 1.87eV as a result of optical reflective spectra. This article offers an easy way to prepare type-II MoS2 film of better crystallite. [Copyright &y& Elsevier]