Improved near-infrared transparency in sputtered In2O3-based transparent conductive oxide thin films by Zr-doping.

Transparent conductive Zr-doped In2O3 (In2-2xZr2xO3) films were deposited on glasses by sputtering method. High mobility of over 80 cm2/V s was achieved under a carrier density of 1.3-2.9×1020 cm-3 at Zr concentrations (x) of 0.014–0.022, and the film at x=0.022 showed the lowest resistivity of 2.6×10-4 Ω cm. Reflecting the high mobility and the low carrier density, the transparency extended from the visible to the near-infrared (NIR) wavelength region with reduced magnitude of the free-carrier absorption. The results indicate that Zr-doped In2O3 films have a performance advantage for applications that require high conductivity and transparency in NIR wavelength region. [ABSTRACT FROM AUTHOR]