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Optimization of super-junction SOI-LDMOS with a step doping surface-implanted layer.
- Source :
-
Semiconductor Science & Technology . May2007, Vol. 22 Issue 5, p464-470. 7p. - Publication Year :
- 2007
-
Abstract
- A super-junction (SJ) SOI-LDMOS with a step doping surface-implanted n-type layer is proposed and optimized which allows high breakdown voltage (BV) and low on-resistance (Ron). The proposed structure overcomes the field effect action in conventional SJ SOI-LDMOS devices, thus achieving the charge compensation between the n and p pillars as well as a near uniform electric field distribution in the drift region in the off-state. The surface-implanted layer also provides a low current path in the on-state. In addition, the analysis result of surface doping distribution is obtained which is a power tool for device designers to provide accurate first-order design schemes. The simulation results show that an increase in the off-state BV by 55% and a reduction of the specific on-resistance by 37.4% are obtained for the proposed device when compared with those of the conventional one. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRIC fields
*ELECTRIC conductivity
*ELECTRIC currents
*ELECTROMAGNETIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 22
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 24581147
- Full Text :
- https://doi.org/10.1088/0268-1242/22/5/002