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Comparison of three different architectures for active resistive memories

Authors :
Mustafa, Jakob
RĂ¼diger, Andreas
Waser, Rainer
Source :
AEU: International Journal of Electronics & Communications. May2007, Vol. 61 Issue 5, p345-352. 8p.
Publication Year :
2007

Abstract

Abstract: Resistive memory (RRAM) is one of the strong emerging technologies in modern memory field. This type of memories has the potential to be the replacement of several current memory types. As any new technology, RRAM brings new challenges concerning technology and design. This work discusses some aspects concerning the design of active resistive memories and compares three possible memory architectures. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
14348411
Volume :
61
Issue :
5
Database :
Academic Search Index
Journal :
AEU: International Journal of Electronics & Communications
Publication Type :
Academic Journal
Accession number :
24614021
Full Text :
https://doi.org/10.1016/j.aeue.2006.06.004