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Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering
- Source :
-
Materials Letters . May2007, Vol. 61 Issue 11/12, p2460-2463. 4p. - Publication Year :
- 2007
-
Abstract
- Abstract: Ga-doped zinc oxide (ZnO:Ga) transparent conductive films with highly (002)-preferred orientation were deposited on glass substrates by DC reactive magnetron sputtering method in Ar + O2 ambience with different Ar/O2 ratios. The structural, electrical, and optical properties were investigated by X-ray diffraction, Hall measurement, and optical transmission spectroscopy. The resistivity and optical transmittance of the ZnO:Ga thin films are of the order of 10−4 Ω cm and over 85%, respectively. The lowest electrical resistivity of the film is found to be about 3.58×10−4 Ω cm. The influences of Ar/O2 gas ratios on the resistivity, Hall mobility, and carrier concentration were analyzed. [Copyright &y& Elsevier]
- Subjects :
- *SPECTRUM analysis
*SOLID state electronics
*ZINC compounds
*SURFACES (Technology)
Subjects
Details
- Language :
- English
- ISSN :
- 0167577X
- Volume :
- 61
- Issue :
- 11/12
- Database :
- Academic Search Index
- Journal :
- Materials Letters
- Publication Type :
- Academic Journal
- Accession number :
- 24708638
- Full Text :
- https://doi.org/10.1016/j.matlet.2006.09.038