High insulating quality CaF2 pseudomorphic films on Si(111).

Authors :: Sokolov, N. S.
Kaveev, A. K.
Krupin, A. V.
Tyaginov, S. E.
Vexler, M. I.
Ikeda, S.
Tsutsui, K.
Saiki, K.
Source :: Applied Physics Letters. 4/2/2007, Vol. 90 Issue 14, p142909-3. 3p. 1 Diagram, 2 Graphs.
Publication Year :: 2007
Abstract: Current-voltage characteristics of epitaxially grown Au/CaF2/Si(111) metal-insulator-semiconductor structures with thin (1.5–6 nm) pseudomorphic fluoride layer have been studied. It was found that CaF2 films in these structures are of better insulating quality than those in the devices reported previously. Typical breakdown field for the fluorite layers was about 8×106 V/cm and the tunnel current did not exceed the values predicted by simulations with realistic parameters. [ABSTRACT FROM AUTHOR]