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Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition
- Source :
-
Applied Surface Science . May2007, Vol. 253 Issue 14, p6255-6258. 4p. - Publication Year :
- 2007
-
Abstract
- Abstract: Epitaxial ZnO thin films have been synthesized directly on Si(111) substrates by pulsed laser deposition (PLD) in vacuum. The reflection high-energy electron diffraction (RHEED) indicates that streaky patterns can be clearly observed from the ZnO epilayers prepared at 600 and 650°C, revealing a two-dimensional (2D) growth mode. While the ZnO thin film deposited in oxygen ambient shows ring RHEED pattern. There is a compressive in-plane stress existing in the ZnO epitaxial film, but a tensile one in the polycrystalline film. Compared with the ZnO epilayer, the ZnO polycrystalline film shows more intense ultraviolet emission (UVE) with a small full width at half maximum (FWHM) of 89meV. It is suggested that the atomically flat epilayers may be powerfully used as transitive stratums to grow high-quality ZnO films suitable for the fabrication of optoelectronic devices. [Copyright &y& Elsevier]
- Subjects :
- *THIN films
*COATING processes
*PULSED laser deposition
*ELECTRON diffraction
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 253
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 24783018
- Full Text :
- https://doi.org/10.1016/j.apsusc.2007.01.089