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Phosphorescent organic light-emitting devices with in situ post-growth annealed organic layers
- Source :
-
Materials Science & Engineering: B . May2007, Vol. 139 Issue 2/3, p192-196. 5p. - Publication Year :
- 2007
-
Abstract
- Abstract: A comparative study of in situ post-growth annealing of organic layers before hole-blocking layer (HBL) or metal cathode deposition was conducted on tris-(phenyl-pyridyl)-iridium complex, Ir(ppy)3-based phosphorescent organic light-emitting devices (PHOLED). The devices were fabricated in the same run with a standard device without annealing for comparison, with an identical structure of indium tin oxide (ITO)/copper phthalocyanine (CuPc) (10nm)/N,N′-di(naphthalene-l-yl)-N,N′-diphenyl-benzidine (NPB) (90nm)/4,4′-bis(carbazol-9-yl)-biphenyl (CBP):Ir(ppy) (40nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (15nm)/tris(8-hydroxy-chinolinato) aluminum (Alq3) (40nm)/Mg:Ag (200nm)/Ag (20nm). The annealing temperature used was 60, 80 and 100°C, before deposition of BCP HBL or before Mg:Ag cathode, respectively. It was found that, before BCP deposition, 60°C in situ post-growth annealing improves performance of the device, and the devices decay significantly with 80 and 100°C annealing. The in situ post-growth annealed organic layers were characterized by photoluminescence and Raman spectroscopy. [Copyright &y& Elsevier]
- Subjects :
- *RAMAN spectroscopy
*LUMINESCENCE
*SPECTRUM analysis
*COMPARATIVE studies
Subjects
Details
- Language :
- English
- ISSN :
- 09215107
- Volume :
- 139
- Issue :
- 2/3
- Database :
- Academic Search Index
- Journal :
- Materials Science & Engineering: B
- Publication Type :
- Academic Journal
- Accession number :
- 24970721
- Full Text :
- https://doi.org/10.1016/j.mseb.2007.02.007