Modified transmission line model to investigate non-Ohmic contact behavior and its application on GaN.

In this article we proposed a modified transmission line model method to analyze non-Ohmic contact. It can differentiate the contact resistance while the current flows into and out of the contact. When the earlier two factors are equal, this method degenerate to traditional method. By this method, we obtained contact parameters for both p-GaN and n-GaN and revealed the validity of this method. To further study the contact characteristics and transportation mechanism between alloyed Ni/Au and p-GaN, we also measured barrier information at different temperature and current. The result indicates the hole passes through the barrier by thermionic emission and the barrier may lowered by image force. [ABSTRACT FROM AUTHOR]