Polysilicon Thin-Film Transistors With Uniform and Reliable Performance Using Solution-Based Metal-Induced Crystallization.

We studied electrical characteristics of p-channel polycrystalline silicon thin-film transistors (TFT) fabricated by solution-based metal-induced crystallization (SMIC). In particular, the effect of annealing conditions was systematically investigated. The current-voltage characteristics show that the performance of TFTs was dominated by the SMIC process rather than the annealing temperature up to 630 °C. All the devices exhibited good uniformity after annealing. The effects of gate stress and self-heating stress were also studied. The device performance was not affected by both stresses for all devices, p-channel SMIC poly-Si TFT has high performance, good uniformity, and satisfactory reliability with a process temperature < 600 °C. [ABSTRACT FROM AUTHOR]